Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As Grown on InP |
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| Authors: | S Ohya H Yamaguchi and M Tanaka |
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| Affiliation: | (1) Department of Electronic Engineering, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan;(2) Japan Science and Technology Corporation, Kawaguchi, 332-0012, Japan |
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| Abstract: | We have studied properties of quaternary alloy magnetic semiconductor (InGaMn)As grown on InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). A large MCD peak whose intensity is larger than 500 mdeg for (InGaMn)As was observed. This peak intensity was about three times larger than that of typical (GaMn)As films. Relatively high Curie temperature of 83 K of (In0.53Ga0.47)0.88Mn0.12]As was observed by Hall measurements. The carrier concentration of (In0.53Ga0.47)0.88Mn0.12]As was estimated to be more than 1.0 × 1021 cm–3 by using the Curie–Weiss fitting of the Hall coefficient R
H, indicating that more than 40% of Mn atoms are activated. This means that (InGaMn)As has a higher activation ratio of Mn as acceptors than (GaMn)As. |
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| Keywords: | (InGaMn)As quaternary alloy magnetic semiconductor molecular beam epitaxy magneto-optical effect spin electronics |
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