Lithography-Free Fabrication of Large Area Subwavelength Antireflection Structures Using Thermally Dewetted Pt/Pd Alloy Etch Mask |
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Authors: | Youngjae Lee Kisik Koh Hyungjoo Na Kwanoh Kim Jeong-Jin Kang Jongbaeg Kim |
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Affiliation: | (1) School of Mechanical Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-Gu, Seoul, 120-749, Korea;(2) Korea Institute of Industrial Technology (KITECH), Bucheon-si, Kyunggi-do, Korea |
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Abstract: | We have demonstrated lithography-free, simple, and large area fabrication method for subwavelength antireflection structures
(SAS) to achieve low reflectance of silicon (Si) surface. Thin film of Pt/Pd alloy on a Si substrate is melted and agglomerated
into hemispheric nanodots by thermal dewetting process, and the array of the nanodots is used as etch mask for reactive ion
etching (RIE) to form SAS on the Si surface. Two critical parameters, the temperature of thermal dewetting processes and the
duration of RIE, have been experimentally studied to achieve very low reflectance from SAS. All the SAS have well-tapered
shapes that the refractive index may be changed continuously and monotonously in the direction of incident light. In the wavelength
range from 350 to 1800 nm, the measured reflectance of the fabricated SAS averages out to 5%. Especially in the wavelength
range from 550 to 650 nm, which falls within visible light, the measured reflectance is under 0.01%. |
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Keywords: | Subwavelength antireflection structure Nanostructure Thermal dewetting Self-agglomeration |
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