低温烧结CuO-V_2O_5-Bi_2O_3掺杂Zn_3Nb_2O_8陶瓷的微波介电性能

研究了CuO–V2O5–Bi2O3作为烧结助剂对Zn3Nb2O8陶瓷的烧结特性、微观结构、相结构及微波介电性能的影响。CuO–V2O5–Bi2O3复合掺杂可以将Zn3Nb2O8陶瓷的烧结温度从1150℃降到900℃。在900℃烧结4h的Zn3Nb2O8–0.25%(质量分数,下同)CuO–1.5%V2O5–1.5%Bi2O3陶瓷的密度达到了理论密度的98.1%,相对介电常数为18.8,品质因数与谐振频率之积为39442GHz。该体系的介电性能和陶瓷的致密度与烧结助剂的含量及烧结温度密切相关,陶瓷的致密度和相对介电常数随CuO–V2O5–Bi2O3烧结助剂含量的增加而增加,同样陶瓷的致密度和相对介电常数也随烧结温度的升高而提高。

MICROWAVE DIELECTRIC PROPERTIES OF LOW-TEMPERATURE FIRED Zn3Nb2O8 CERAMICS WITH CuO-V2O5-Bi2O3

The influences of CuO–V2O5–Bi2O3 additives on the sintering behavior,phase composition,microstructure and microwave dielectric properties of Zn3Nb2O8 ceramics were investigated. Co-doping of CuO,V2O5 and Bi2O3 can significantly lower the sintering temperature of Zn3Nb2O8 ceramics from 1 150 to 900 ℃. Zn3Nb2O8–0.25% （in mass,the same below） CuO–1.5% V2O5–1.5% Bi2O3 ceramic sintered at 900 ℃ for 4 h has a relative density of 98.1%,a relative dielectric constant of 18.8,and a product of quality factor and resonant frequency at 39 442 GHz. The dielectric properties and relative density of ceramics exhibit a significant dependence on the content of additives and the sintering temperature. The relative density and relative dielectric constant of Zn3Nb2O8 ceramics increase with the increase of CuO–V2O5–Bi2O3 content and the increase of the sintering temperature.