Ion beam preparation of passivated copper integrated circuit structures for electron backscatter diffraction/orientation imaging microscopy analysis |
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Authors: | Matthew M Nowell |
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Affiliation: | (1) TSL/EDAX, 392 East 12300 South Suite H, 84020 Draper, UT |
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Abstract: | Passivation layers were removed from copper interconnect lines using a broad beam ion source in preparation for electron backscatter
diffraction (EBSD) and orientation imaging microscopy (OIM) analysis. Results were obtained on interconnect lines with widths
as small as 0.25 μm. The effects of ion beam energy and scanning electron microscope (SEM) acceleration voltage on the quality
of the results obtained are examined and explained. The use of thin amorphous carbon coatings to reduce specimen charging
during orientation data collection is also discussed. |
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Keywords: | Electron backscatter diffraction (EBSD) orientation imaging microscopy (OIM) ion beam sample preparation |
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