Fabrication of silicon membrane using fusion bonding and two-step electrochemical etch-stopping |
| |
Authors: | B. K. Ju M. H. Oh K. H. Tchah |
| |
Affiliation: | (1) Division of Electronics and Information Technology, Korea Institute of Science and Technology, 39-1, Haweolgog-dong, Seongbuk-gu, 136-791 Seoul, Korea;(2) Department of Electronics Engineering, Korea University Anam-dong, Seonbuk-gu, 136-701 Seoul, Korea |
| |
Abstract: | A new type of silicon membrane structure was fabricated using wafer fusion bonding and two-step electrochemical etch-stopping methods. An active wafer of p-type epi/n-type epi/p-type substrate was first elctrochemically etched to form a shallow cavity on the p-type epitaxial layer. Then, the cavity-formed side was fusionally bonded with p-type silicon working wafer and, afterwards, the p-type substrate of the active wafer part was removed by a second electrochemical etch-stopping leaving only the n-type membrane on the shallow cavity. Using the new membrane structure in mechanical sensors, more precise control of cavity depth and membrane thickness was achievable and the influence of crystalline imperfections on the sensing circuits located near the bonding seam was avoidable. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|