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Single event transient effects in a voltage reference |
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| Authors: | P.C. Adell R.D. Schrimpf C.R. Cirba W.T. Holman X. Zhu H.J. Barnaby O. Mion |
| Affiliation: | aVanderbilt University, Box 1825 Station B, Nashville, TN37235 1825, USA;bDepartment of Electrical and Computer Engineering, Arizona University, Tucson AZ, 85721-0104, USA;cAlcatel Space, 100 Bd du Midi BP 99, 06156 Cannes La Bocca, France |
| Abstract: | The Single Event Transient response of the LM236 band gap voltage reference from Texas Instruments is analyzed through heavy ion experiments and simulation. The LM236 circuit calibration was performed using generic transistor parameters that were subsequently optimized using device and circuit simulations. This technique avoids the requirement for performing detailed device-level parameter extraction and simplifies the SET methodology for circuit calibration. |
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