Electrical characteristics of textured polysilicon oxide preparedby a low-temperature wafer loading and N2 preannealingprocess |
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| Authors: | Shye Lin Wu Ta Yow Lin Chung Len Lee Tai Fu Lei |
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| Affiliation: | Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu; |
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| Abstract: | A low-temperature wafer loading and N2 preannealing process was used to grow a thin textured polysilicon oxide. The polyoxide grown on the heavily doped polysilicon film exhibits less oxide tunneling leakage current and higher dielectric strength when the top electrode is positively biased |
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