Magnetoimpedance effect in semiconducting La0.4Sr0.6MnO3 |
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| Affiliation: | 1. Magnetism Department, Lomonosov Moscow State University, Leninskiye Gory 1-2, Moscow 119991, Russia;2. Research and Education Center “Smart Materials and Biomedical Applications” Immanuel Kant Baltic Federal University, Gaidara 6, Kaliningrad 236001, Russia;1. Department of Physics, College of Humanities and Sciences, Nihon University, Setagaya-ku, Tokyo 156-8550, Japan;2. Department of Integrated Sciences in Physics and Biology, College of Humanities and Sciences, Nihon University, Setagaya-ku, Tokyo 156-8550, Japan;1. Depto de Electricidad y Electrónica, Universidad del País Vasco UPV/EHU, 48940 Leioa, Spain;2. Ural Federal University, Institute of Natural Sciences, 620000 Ekaterinburg, Russia;3. BCMaterials, Universidad del País Vasco (UPV/EHU), 48080 Bilbao, Spain;4. Department of Material Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA;5. Institute of Electrophysics UD RAS, 620016 Ekaterinburg, Russia;6. Department of Biomedical Physics and Engineering, Ural State Medical University, Ekaterinburg 620028, Russia |
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| Abstract: | In the present work, it was found that for La0.4Sr0.6MnO3, the dc resistance decreases with increasing temperature, from 77 to 280 K. Different from the case of metallic La0.65Sr0.35MnO3, the ac impedance of the semiconducting La0.4Sr0.6MnO3 at room temperature decreases with increasing frequency, from 100 kHz to 12 MHz. The magnetoimpedance effect was observed in La0.4Sr0.6MnO3 at room temperature. The value of impedance ratio (Z(0)−Z(H))/Z(0) at H=0.8 kOe reaches 5% at a frequency of 500 kHz. |
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