High rate of diamond deposition through graphite etching in a hot filament CVD reactor |
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| Affiliation: | 1. Center for Microstructure Science of Materials, School of Material Science and Engineering, Seoul National University, Seoul 151-742, South Korea;2. Korea Research Institute of Standards and Science, P.O. Box 102, Yusung Taejon 305-600, South Korea;1. Department of Chemistry, College of Science, Northeastern University, Shenyang 110819, People''s Republic of China;2. School of Mechanical Engineering and Automatic, Northeastern University, Shenyang 110819, People''s Republic of China;1. Department of Electronic Eng., Kunsan National University, Kunsan 54150, Republic of Korea;2. Queensland Micro- and Nanotechnology Centre and Griffith School of Engineering, Griffith University, QLD 4111, Australia;1. School of Nuclear Science and Technology, Lanzhou University, 730000, China;2. Key Laboratory of Special Function Materials and Structure Design, Ministry of Education, Lanzhou University, 730000, China;1. Department of Physics, TMB University Bhagalpur, India;2. Centre for Ocean and Atmospheric Sciences, Aamity University, Jaipur Rajasthan, India;3. Member Satae Innovative Council, Govt. of Bihar, India;1. Charles University, Faculty of Science, Department of Analytical Chemistry, UNESCO Laboratory of Environmental Electrochemistry, Albertov 6, CZ-12843 Prague 2, Czech Republic;2. Charles University, Faculty of Science, Department of Physical and Macromolecular Chemistry, Albertov 6, CZ-12843 Prague 2, Czech Republic;3. Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, v.v.i., Heyrovsky Sq. 2, CZ‐16206 Prague 6, Czech Republic;4. Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i., Na Slovance 2, CZ-18221 Prague 8, Czech Republic |
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| Abstract: | Although a hot filament diamond CVD reactor has many advantages over other processes, the relatively low growth rate of the films has been a crucial drawback. We developed a new hot filament process that uses no hydrocarbon gas for diamond deposition. The graphite plate was placed below the silicon substrate and only hydrogen was supplied during the process. We could achieve the growth rate of 9 μm/h, which is approximately 9 times higher than that of conventional hot filament CVD using a gas mixture of methane and hydrogen. In spite of the high growth rate, the quality of diamond films was not degraded. Besides, the diamond films consisted of small crystallites with a smooth surface while the conventional diamond films of the same thickness tend to have a columnar structure with a rough surface. |
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