Growth of homoepitaxial diamond doped with nitrogen for electron emitter |
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| Affiliation: | 1. Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 6-16-1, Chitosedai, Setagaya, Tokyo 157-8572, Japan;2. Advanced Materials Laboratory, National Institute for Materials Science, 1-1, Namiki, Tsukuba 305-0044, Japan;3. Department of Physics, International Christian University, 3-10-2, Osawa, Mitaka, Tokyo 181-8282, Japan;1. Department of Material and Production Engineering, Faculty of Mechanical Engineering, Bialystok University of Technology, Wiejska 45C, 15-351 Bialystok, Poland;2. Department of Mechanics and Mechanical Engineering, Faculty of Transport and Computer Science, University of Economics and Innovation, Projektowa 4, 20-209 Lublin, Poland;3. Department of Materials Science, Faculty of Mechanical Engineering, Lublin University of Technology, Nadbystrzycka 36, 20-618 Lublin, Poland;1. Key Laboratory of Physical Electronics and Devices, Ministry of Education.School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China;2. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China;1. National Key Laboratory of Special Environment Composite Technology, Harbin Institute of Technology, Harbin, 150001, China;2. Prokhorov General Physics Institute of Russian Academy of Sciences, Moscow, 119991, Russia;3. HRG Institute (Zhongshan) of Unmanned Equipment & AI, Zhongshan, 528521, China;4. Key Laboratory of Micro-systems and Micro-structures Manufacturing Ministry of Education, Harbin Institute of Technology, Harbin, 150001, China |
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| Abstract: | Although we had reported the remarkable low threshold emission from polycrystalline diamond heavily doped with nitrogen (N) Nature 381 (1996) 140], the problems caused by polycrystallinity still remain for understanding the electron emission mechanism. This paper describes the growth of N-doped homoepitaxial diamond film {100}, {111} and {110}, and their electron emission properties. N-doped homoepitaxial diamond is grown on synthetic diamond by hot filament chemical vapor deposition. Urea (NH2)2CO] is used as a dopant for N. Atomic force microscope (AFM) observations indicate that the relatively smooth surface morphologies are obtained for all the films. The epitaxial growth of all the film is confirmed using reflective high energy electron diffraction (RHEED) patterns. Reflective electron energy loss spectra (REELS) indicate that the very surfaces of {100} and {111} are diamond while {110} is graphite rather than diamond. Raman spectra suggest that the bulk of the obtained films are diamond. The resistivities of the films are found to be much higher than the detection limit of the system. The relatively low threshold emission was observed even from the smooth surface and the threshold voltage is confirmed to depend on the crystal orientation. It is speculated from the film characterizations and the electron emission properties that the low threshold emission is due to high resistance rather than rough surface and/or grain boundaries. |
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