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Spontaneous oxide reduction in metal stacks |
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| Authors: | Wentao Qin Alex A Volinsky N David Theodore Chandra Ramiah |
| Affiliation: | a Advanced Products R&D Lab., Freescale Semiconductor Inc., Tempe, AZ 85284, USA b Department of Mechanical Engineering, University of South Florida, Tampa, FL 33620, USA c RF/IF Device Engineering, Freescale Semiconductor Inc., Tempe, AZ 85284, USA |
| Abstract: | Aluminum and copper interconnects are widely used for microelectronic applications. A problem can arise when interfacial oxides are present. Such oxides can significantly degrade device performance by increasing electrical resistance. This paper describes analyses of interfacial oxide layers found in Al/Ta and Ta/Cu metal stacks. The analyses were performed through transmission electron microscopy (TEM). The data indicated that the interfacial oxides resulted from spontaneous reductions; that is, Al spontaneously reduced Ta2O5 to form Al2O3, while Ta spontaneously reduced Cu oxide to form Ta2O5. |
| Keywords: | 82 65 Dp 68 35 Fx 73 90 +f 61 16 Bg 82 80 Pv |
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