| Al-induced Lateral Crystallization of Amorphous Si Thin Films by Microwave Annealing |
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| 作者姓名： | RAORui XUZhong-yang等 |
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| 作者单位： | Huazhong University of Science and Technology |
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| 基金项目： | thecooperationprojectbetweenHuazhongUniversityofSci.&Tech .andHongkongUniversityofSci.&Tech |
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| 摘 要： | Al-induced lateral crystallization of amorphous silicon thin films by micr owave annealing is investigated,The erystallized Si films are examined by optical microscopy,Raman spectroscopy ,transimission electron microscopy and transmission electron diffraction micrography.After microwave annealing at 480 ℃ for 50min the amorphous Si is completely cystallized with lagrge grains of main (111) orientation,The rate of lateral crystallization is 0.04μm/min,This process,labeled MILC-MA ,not only lowers the temperature but also reduces the time of crystallization.The crystallization.mechanism during microwave annealing and the electrical properies of polycrystalline Si thin films are analyzed.This MILC-MA process has potentila application in large area electronics.
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| 关 键 词： | 微波退火法 非晶硅薄膜 半导体材料 晶体生长 相变 Al诱导 |
| 收稿时间： | 10 September 2001 |
Al-induced lateral crystallization of amorphous Si thin films by microwave annealing |
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| Rao Rui Ph D,Xu Zhong-yang,Zeng Xiang-bing.Al-induced Lateral Crystallization of Amorphous Si Thin Films by Microwave Annealing[J].Journal of Wuhan University of Technology. Materials Science Edition,2002,17(4):25-28. |
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| Authors: | Rao Rui Ph D Xu Zhong-yang Zeng Xiang-bing |
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| Affiliation: | RAO Rui XU Zhong-yang ZENG Xiang-bing Huazhong University of Science and Technology |
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| Abstract: | Al-induced lateral crystallization of amorphous silicon thin films by microwave annealing is investigated. The crystallized
Si films are examined by optical microscopy, Raman spectroscopy, transmission electron microscopy and transmission electron
diffraction micrography. After microwave annealing at 480 °C for 50 min, the amorphous Si is completely crystallized with
large grains of main (111) orientation. The rate of lateral crystallization is 0.04 μm/min. This process, labeled MILC-MA,
not only lowers the temperature but also reduces the time of crystallization. The crystallization mechanism during microwave
annealing and the electrical properties of polycrystalline Si thin films are analyzed. This MILC-MA process has potential
applications in large area electronics.
RAO Rui: Born in 1969.
Funded by the cooperation project between Huazhong University of Sci. & Tech. and Hongkong University of Sci. & Tech. |
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| Keywords: | semiconductor thin film crystal growth phase transition |
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