Effects of annealing on the formation of Mg2Si film prepared by resistive thermal evaporation method

The effects of annealing time and temperature on the formation and structure of magnesium silicide (Mg₂Si) films were investigated. Magnesium films of 380 nm thickness were deposited on Si (111) substrates using resistive thermal evaporation method. The films were then annealed in an annealing furnace under a low vacuum atmosphere of 10^?1–10^?2 Pa. The results showed that the crystallization quality of Mg₂Si films was strongly affected by the annealing time and temperature. Annealing at 400 °C for 4 h was the optimal preparation conditions for Mg₂Si films.