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Thermal stress driven Sn whisker growth: in air and in vacuum
Authors:Jung-Lae Jo  Shijo Nagao  Tohru Sugahara  Masanobu Tsujimoto  Katsuaki Suganuma
Affiliation:1. The Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan
2. R&D Division, C. Uyemura & Co., Ltd., Osaka, Japan
Abstract:Whisker growths from matte tin electroplating have been observed during thermal cycling up to 1,000 cycles either in air or in vacuum. The density, length, and width of thermal stress whiskers depend on the plating thickness of 2 and 5 μm in the present study. Whiskers grown on the 2 μm plating are longer and thinner than those on 5 μm plating. In both cases, whiskers grow thinner and faster in vacuum than in air. These apparent variations come from the grain sizes and the thermal stress distributions in the electroplating, intrinsically different in 2 and 5 μm thick films. The grain structure of whisker root, particularly grain boundary cracks oxidized in air, determines the stress concentration to drive the whisker growth. Cracking caused by oxidation was rarely observed in vacuum hence causes thin and straight whiskers even from thick plating. Our results indicate that the stress concentration at whisker root grain is essential for controlling whisker growth morphology, and has a critical impact on various electronic applications.
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