Fast chemical vapor deposition of microcrystalline silicon by applying magnetic field to hollow electrode enhanced radio frequency glow plasma |
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Authors: | T. Tabuchi M. Takashiri |
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Affiliation: | a Research Division, Komatsu Ltd., 2-3-5 Akasaka, Minato-ku, Tokyo 107-8414, Japan b Research Division, Komatsu Ltd., 1200 Manda, Hiratsuka, Kanagawa 254-8567, Japan |
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Abstract: | Fast chemical vapor deposition of microcrystalline silicon by applying magnetic field to hollow electrode enhanced radio frequency (rf) glow plasma has been investigated. We have already developed a plasma generation technique called hollow electrode enhanced rf glow plasma transportation (HEEPT). In this study, we equipped a HEEPT system with a hollow cylinder shaped permanent magnet around an orifice prepared at the center of the counter electrode. The plasma was characterized by plasma emission spectroscopy. Silicon thin films were deposited on a glass substrate. It was found that increasing the magnetic flux density resulted in increasing plasma emission intensity, film deposition rate, and crystallinity. The maximum deposition rate of 6.9 nm/s was achieved with high crystallinity and photo-sensitivity at a plasma excitation frequency of 13.56 MHz, a substrate temperature of 300 °C and a magnetic flux density of 75 mT. Our results indicate that the magnetic field is effective in promoting fast chemical vapor deposition of microcrystalline silicon thin films with photo-sensitivity using the HEEPT technique. We consider that the effectiveness is due to a decrease of electron temperature caused by drift motion of electrons in the magnetic field inside the orifice. |
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Keywords: | Hollow electrode enhanced radio frequency glow plasma Microcrystalline silicon Magnetic field Thin film |
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