| 具有正斜率增益的GaAs MMIC宽带放大器芯片设计 |
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| 引用本文： | 刘文杰,高学邦.具有正斜率增益的GaAs MMIC宽带放大器芯片设计[J].半导体技术,2012,37(2):118-121. |
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| 作者姓名： | 刘文杰 高学邦 |
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| 作者单位： | 中国电子科技集团公司第十三研究所,石家庄,050051;中国电子科技集团公司第十三研究所,石家庄,050051 |
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| 摘 要： | 介绍了一种宽带放大器芯片,该放大器的工作频率覆盖了2～12 GHz,采用砷化镓(GaAs)赝配高电子迁移率晶体管(PHEMT)单片电路工艺实现。在一个宽带负反馈放大器的前面集成了一个幅度均衡器,使放大器的增益在整个带内具有7 dB的正斜率,频率低端(2 GHz)增益为3 dB,高端(12 GHz)为10 dB,输入输出电压驻波比为1.6∶1,饱和输出功率为20 dBm,芯片尺寸为2.0 mm×1.5 mm×0.1 mm。详细描述了电路的设计流程,并对最终的测试结果进行了分析。该芯片具有频带宽、体积小、使用方便的特点,可作为增益块补偿微波系统中随着频率升高而产生的增益损失。
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| 关 键 词： | 宽带 砷化镓 赝配高电子迁移率晶体管 均衡器 放大器 |
Wide Band GaAs MMIC Amplifier with Positive Gain Slop |
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| Liu Wenjie
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Gao Xuebang.Wide Band GaAs MMIC Amplifier with Positive Gain Slop[J].Semiconductor Technology,2012,37(2):118-121. |
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| Authors: | Liu Wenjie Gao Xuebang |
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| Affiliation: | (The 13th Research Institute,CETC,Shijiazhuang 050051,China) |
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| Abstract: | A wide band GaAs MMIC amplifier with GaAs PHEMT technology was described.Its frequency covers 2-12 GHz bandwidth.A amplitude equalizer was added in front of the feedback wide band ampilifer.The amplifier has 7 dB positive gain slop,the gain is 3 dB at 2 GHz and 10 dB at 12 GHz,the VSWR is less than 1.6∶ 1 and the chip size is 2.0 mm×1.5 mm×0.1 mm.The design procedure was described and the test results were analysed.The circuit is convenience for use,small size and wide band.It can be used as a gain block to compensate the gain loss with increasing frequency in microwave systems. |
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| Keywords: | wide band GaAs pseudomorphic high electronic mobility transistor(PHEMT) equalizer amplifier |
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