Enhanced piezoelectric properties of Ta substituted-(K0.5Na0.5)NbO3 films: A candidate for lead-free piezoelectric thin films |
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Authors: | Sun Young LeeChang Won Ahn Jin Soo KimAman Ullah Hai Joon LeeHak-In Hwang Jin Sik ChoiBae Ho Park Ill Won Kim |
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Affiliation: | a Department of Physics, University of Ulsan, Ulsan 680-749, South Korea b Convergence Components R&D Division, KETI, Seongnam 463-816, South Korea c Department of Physics, Konkuk University, Seoul 143-701, South Korea |
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Abstract: | Piezoelectric (K0.5Na0.5)NbO3 (KNN) and (K0.5Na0.5)(Nb0.7Ta0.3)O3 (KNNT) thin films were prepared via chemical solution deposition. An analysis of X-ray diffraction revealed that Ta5+ diffuses into the KNN to form a single perovskite structure. Compared to KNN films, KNNT films exhibited a low leakage current density due to their fine-grain nonporous structures. The partial substitution of Ta5+ for the B-site ion Nb5+ in the KNNT films decreased the Curie temperature (TC). This in turn led to the existence of a polymorphic phase transition near room temperature and further improvement in the piezoelectric properties. Lead-free KNNT films exhibited a well-saturated piezoelectric hysteresis loop with a effective piezoelectric coefficient (d33,eff) value of 61 pm/V, comparable to that of PZT thin films. |
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Keywords: | Lead-free KNN thin film Ta substitution Piezoelectric Chemical solution deposition |
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