GaAs 10 bit DAC的抗辐射设计和实验

通过分析砷化镓(GaAs)器件的电离辐射剂量率辐照机理和效应,结合电路结构,描述了砷化镓10 bit数模转换器(DAC)的电离辐射剂量率辐射效应、抗辐射设计和辐照实验。在电路设计上,10 bit DAC由两个5 bit DAC组成,通过芯片内部合成10 bit DAC,有效降低了芯片面积和制造工艺难度;通过分析电路的电离辐射剂量率辐射效应,针对敏感电路进行局部电路的抗辐射设计,提高电路抗辐射能力;结合实验条件和器件引线分布,设计合理的辐照实验方案,开发辐照实验电路板,进行辐照实验,获得科学的实验结果,验证电路的抗辐射能力。实验结果表明该数模转换器能够抗3×1011rad(Si)/s剂量率的瞬时辐照。

Research on the Anti-Radiation Design and Test of GaAs 10 bit DAC

By analyzing ionizing radiation dose rate irradiation mechanisms,the effects of GaAs devices and the circuit structure,ionizing radiation dose rate radiation effects,anti-radiation design and irradiation test of the GaAs 10 bit digital to analog converter(DAC)were described.Using 10 bit DAC synthesized by two 5 bit DAC chips,chip area and the difficulty of the production process were reduced effectively.Base on analyzing ionizing radiation dose rate radiation effects of the DAC,anti-radiation design of local circuit was carried out to improve the anti-radiation ability of sensitive circuits.Combined the test conditions and the device lead distribution,the irradiation test scheme was designed,the irradiation test circuit board was developed,the experiment was conducted and the scientific test result was accessed.At last the anti-radiation ability of the circuits was verified.The results show that the DAC can tolerate 3×1011 rad(Si)/s instantaneous dose rate irradiation.