| 并联电容对DE类功率放大器的影响 |
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| 引用本文： | 刘昌,李康,孔凡敏.并联电容对DE类功率放大器的影响[J].半导体技术,2012,37(4):299-304. |
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| 作者姓名： | 刘昌 李康 孔凡敏 |
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| 作者单位： | 山东大学信息科学与工程学院,济南,250100;山东大学信息科学与工程学院,济南,250100;山东大学信息科学与工程学院,济南,250100 |
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| 摘 要： | DE类功率放大器既综合了D类和E类功率放大器的优点,继承了开关型功率放大器高效率的特征,又同时避免了D类和E类功率放大器的缺陷,使其成为了人们关注和研究的热点。随着工作频率的升高,MOSFET寄生电容在DE类功率放大器并联电容的计算中无法忽略。经过理论分析得到了MOSFET寄生电容的等效电容表达式,通过使用等效电容表达式,可以获得包含MOSFET寄生电容影响的并联电容的取值,提高了DE类功率放大器设计精度,保证了DE类功率放大器在高频时的高效率。通过SPICE模型仿真和电路实验验证了分析的有效性。
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| 关 键 词： | DE类功率放大器 高频率 高效率 并联电容 MOSFET寄生电容 |
Effect of Shunt Capacitance on Class DE Power Amplifier |
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| Liu Chang
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Li Kang
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Kong Fanmin.Effect of Shunt Capacitance on Class DE Power Amplifier[J].Semiconductor Technology,2012,37(4):299-304. |
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| Authors: | Liu Chang Li Kang Kong Fanmin |
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| Affiliation: | (School of Information Science and Engineering,Shandong University,Jinan 250100,China) |
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| Abstract: | Class DE power amplifier was one of high-efficiency switch-mode power amplifiers,which combined advantages of class D and class E power amplifier,and avoided shortcomings of class D and class E power amplifier.With the operating frequency increasing,MOSFET parasitic capacitance could not be ignored in the calculation of shunt capacitance.By theoretical analyzing,an equivalent capacitance of MOSFET parasitic capacitances was given.By using the equivalent capacitance,design accuracy of class DE power amplifier was improved.High efficiency of class DE power amplifier at high frequency could be ensured.The validity of analysis was confirmed by SPICE model simulations and circuit experiments. |
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| Keywords: | class DE power amplifier high frequency high efficiency shunt capacitance MOSFET parasitic capacitance |
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