AlGaN基p-i-n型日盲紫外探测器材料的研制

采用金属有机气相外延(MOCVD)方法在(0001)面蓝宝石衬底上生长了AlN和高铝组分AlGaN材料。通过优化AlN和AlGaN材料的生长温度、生长压力和Ⅴ族元素/Ⅲ族元素物质的量比(nⅤ/Ⅲ)等工艺条件,得到了高质量的AlN和高铝组分AlGaN材料。AlN材料X射线双晶衍射ω(002)半宽为74 arcsec,透射光谱测试带边峰位于205 nm,带边陡峭;Al组分为45%的AlGaN材料X射线双晶衍射ω(002)半宽为223 arcsec,透射光谱测试带边峰位于272 nm,带边陡峭。采用此外延工艺方法生长了AlGaN基p-i-n型日盲紫外探测器材料并进行了器件工艺流片,研制出AlGaN基p-i-n型日盲紫外探测器,响应峰值波长为262 nm,在零偏压下的峰值响应度达到0.117 A/W。

Research on Materials of AlGaN Based p-i-n Solar-Blind Ultraviolet Detectors

AlN and high Al content AlGaN were grown on(0001)sapphire substrates by MOCVD.By optimizing the process parameters such as temperature,pressure,Ⅴ/Ⅲ ratio of AlN and AlGaN,the high quality AlN and AlGaN materials were obtained.X-ray ω(002)full width half maximum(FWHM)of AlN is 74 arcsec,the band edge of transmission spectrum is 205 nm and very sharp.X-ray ω(002)FWHM of Al0.45GaN is 223 arcsec,the band edge of transmission spectrum is 272 nm and very sharp.The material for AlGaN based p-i-n solar-blind UV detector was grown by optimized processing,and the devices were fabricated.AlGaN based p-i-n solar-blind ultraviolet detectors were fabricated,the peak responsivity wavelength is 262 nm,and peak responsivity at zero bias voltage is 0.117 A/W.