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Investigations of the pore formation in the lead selenide films using glacial acetic acid- and nitric acid-based electrolyte
Authors:Zimin Sergey P  Gorlachev Egor S  Naumov Viktor V  Skok Fedor O
Affiliation:1.Microelectronics Department, Yaroslavl State University, Yaroslavl, 150000, Russia;2.Yaroslavl Branch of the Institute of Physics and Technology of Russian Academy of Sciences, Yaroslavl, 150007, Russia
Abstract:ABSTRACT: We report a novel synthesis of porous PbSe layers on Si substrates using anodic electrochemical treatment of PbSe/CaF2/Si(111) epitaxial structures in an electrolyte solution based on glacial acetic acid and nitric acid. Electron microscopy, x-ray diffractometry, and local chemical microanalysis investigations results for the porous layers are presented. Average size of the synthesized mesopores with ~1010 cm-2 surface density was determined to be 22 nm. The observed phenomenon of the active selenium redeposition on the mesopore walls during anodic treatment is discussed.
Keywords:Porous semiconductors, Lead selenide, Anodic electrochemical treatment, Electrolyte, Mesopores, 81.05.Rm   71.20.Nr   81.65.Cf.
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