Investigations of the pore formation in the lead selenide films using glacial acetic acid- and nitric acid-based electrolyte |
| |
Authors: | Zimin Sergey P Gorlachev Egor S Naumov Viktor V Skok Fedor O |
| |
Affiliation: | 1.Microelectronics Department, Yaroslavl State University, Yaroslavl, 150000, Russia;2.Yaroslavl Branch of the Institute of Physics and Technology of Russian Academy of Sciences, Yaroslavl, 150007, Russia |
| |
Abstract: | ABSTRACT: We report a novel synthesis of porous PbSe layers on Si substrates using anodic electrochemical treatment of PbSe/CaF2/Si(111) epitaxial structures in an electrolyte solution based on glacial acetic acid and nitric acid. Electron microscopy, x-ray diffractometry, and local chemical microanalysis investigations results for the porous layers are presented. Average size of the synthesized mesopores with ~1010 cm-2 surface density was determined to be 22 nm. The observed phenomenon of the active selenium redeposition on the mesopore walls during anodic treatment is discussed. |
| |
Keywords: | Porous semiconductors, Lead selenide, Anodic electrochemical treatment, Electrolyte, Mesopores, 81.05.Rm 71.20.Nr 81.65.Cf. |
本文献已被 PubMed 等数据库收录! |
|