| 槽栅型SiC MOSFET器件单粒子响应特性研究 |
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| 引用本文： | 成国栋,陆江,翟露青,白云,田晓丽,左欣欣,杨成樾,汤益丹,陈宏,刘新宇.槽栅型SiC MOSFET器件单粒子响应特性研究[J].微电子学,2022,52(3):466-472. |
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| 作者姓名： | 成国栋 陆江 翟露青 白云 田晓丽 左欣欣 杨成樾 汤益丹 陈宏 刘新宇 |
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| 作者单位： | 中国科学院大学 微电子学院, 北京 100029;中国科学院微电子研究所, 北京 100029;淄博美林电子有限公司, 山东 淄博 255000 |
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| 基金项目： | 国家重点研发计划资助项目(2016YFB0400404) |
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| 摘 要： | 利用TCAD Sentaurus模拟仿真软件,研究分析了三种不同结构的槽栅型1 200 V SiC MOSFET单粒子响应特性,器件包括传统单沟槽MOSFET、双沟槽MOSFET和非对称沟槽MOSFET结构。仿真结果表明,双沟槽MOSFET的抗单粒子特性优于其它两种结构器件。通过分析可知,双沟槽MOSFET结构的优越性在于有较深的源极深槽结构,有助于快速收集单粒子碰撞过程产生的载流子,从而缓解大量载流子聚集带来的内部电热集中,相比其它两种结构能有效抑制引起单粒子烧毁的反馈机制。
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| 关 键 词： | 碳化硅场效应晶体管 单粒子效应 槽栅型结构 电热反馈 |
| 收稿时间： | 2021/8/16 0:00:00 |
Research of Single Event Response Characteristics of Trench Gate SiC MOSFET Devices |
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| CHENG Guodong,LU Jiang,ZHAI Luqing,BAI Yun,TIAN Xiaoli,ZUO Xinxin,YANG Chengyue,TANG Yidan,CHEN Hong,LIU Xinyu.Research of Single Event Response Characteristics of Trench Gate SiC MOSFET Devices[J].Microelectronics,2022,52(3):466-472. |
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| Authors: | CHENG Guodong LU Jiang ZHAI Luqing BAI Yun TIAN Xiaoli ZUO Xinxin YANG Chengyue TANG Yidan CHEN Hong LIU Xinyu |
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| Affiliation: | School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100029, P.R.China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P.R.China;Zibo Micro Commercial Components Corp., Zibo, Shandong 255000, P.R.China |
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| Abstract: | The single event response characteristics of three 1 200 V trench gate SiC MOSFETs with different structures, including the conventional trench gate MOSFET, the double trench MOSFET and the asymmetric trench MOSFET, were studied and analyzed by using Sentaurus TCAD simulation software. The simulation results showed that the SEB SOA of the double trench MOSFET was superior than other two devices during the single event process. The advantage of double trench MOSFET was mainly related to the deep source trench structure, which contributed to the fast collection of the huge carriers generated by the heavy ions collision and suppressed the electrothermal coupling effect from current concentration. Moreover, compared with other two structures, the internal electrothermal coupling effect due to the huge carriers accumulation could be suppressed effectively. This effect was believed to be the main destroying mechanism related to the single event burnout. |
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| Keywords: | SiC MOSFET single event burnout trench gate structure electrothermal feedback |
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