High-speed InAlAs/InGaAs heterojunction bipolar transistors |
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Authors: | Fukano H. Kawamura Y. Takanashi Y. |
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Affiliation: | Opto-Electron. Labs., NTT, Kanagawa; |
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Abstract: | InAlAs/InGaAs heterojunction bipolar transistors fabricated from wafers grown by molecular beam epitaxy are discussed. A cutoff frequency of 32 GHz for a collector current of 20 mA is achieved in the emitter area of devices 6×10 μm2. The use of heavily doped and nondoped InGaAs layers as the emitter cap and collector, respectively, results in a reduction of the emitter and collector charging times; this, in turn, leads to improved microwave performance |
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