| 半导体功率器件直流特性的自动脉冲测量 |
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| 引用本文： | 孙玮,孙钊. 半导体功率器件直流特性的自动脉冲测量[J]. 西北纺织工学院学报, 2013, 0(6): 801-804 |
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| 作者姓名： | 孙玮 孙钊 |
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| 作者单位： | [1]武夷学院机电工程学院,福建武夷山354300 [2]西安工业大学电子信息工程学院,陕西西安710021 |
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| 摘 要： | 为了消除大功率场效应晶体管静态测量时的自加热效应对器件测量结果的影响，提出了一种基于Sagittarius实验测量操作平台设计的新型自动脉冲式电流一电压（I—V）测量系统．用短脉冲技术加低负载循环，通过补偿因子进行系统校准，分析对比直流I—V测量方法和脉；中式I—V测量方法．实验结果表明，所设计的脉冲式I—V测量方法正确有效，能够得到大功率半导体器件真实的输出电导和跨导，自动测量系统相比常规测量方法可以提高测量效率约12倍，为构建大功率场效应晶体管器件的精确模型和工业生产监控提供相关测量数据．
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| 关 键 词： | 大功率场效应晶体管 自加热效应 脉冲电压 自动测量 |
Auto-measurement for high-power devices by pulsed I-V method |
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| SUN Wei,SUN Zhao. Auto-measurement for high-power devices by pulsed I-V method[J]. Journal of Northwest Institute of Textile Science and Technology, 2013, 0(6): 801-804 |
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| Authors: | SUN Wei SUN Zhao |
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| Affiliation: | 1. College of Mechanical and Electrical Engineering, Wuyi University, Wuyishan,Fujian 354300,China; 2. School of Electronic Information Engineering, Xiran Technological University, Xitan 710021,China) |
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| Abstract: | To collect the right data of high-power MOSFETs with self-heating effect, a novel Sagittarius automatic Pulsed I-V measurement system was developed. A short pulse with a low duty cycle technique was employed. The system was calibrated by empirical factor before the measurement started. The com- parison was done between the DC and pulsed I-V methods. The experimental results proved that the pulsed I-V method which produced real output conductance and trans-conductance data of high-power de- vices was correct and effective. Compared with conventional method, this auto-measurement system can be 19. times faster. The automatic pulsed I-V measurement system can provide relevant data for device modeling or industrial monitoring purpose. |
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| Keywords: | high power MOSFETs self-heating pulsed voltage automatic measurement |
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