| 脉冲直流PCVD技术在盲孔底部沉积Ti-Si-N薄膜 |
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| 引用本文： | 马青松 马胜利 徐可为. 脉冲直流PCVD技术在盲孔底部沉积Ti-Si-N薄膜[J]. 稀有金属材料与工程, 2005, 34(5): 738-741 |
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| 作者姓名： | 马青松 马胜利 徐可为 |
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| 作者单位： | 西安交通大学,金属材料强度国家重点实验室,陕西,西安,710049 |
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| 基金项目： | 国家“863”高技术项目(2001AA338010)，国家自然科学基金项目(50271053)，教育部博士点基金项目(20020698016) |
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| 摘 要： | 用脉冲直流等离子体辅助化学气相沉积(PCVD)技术在盲孔的底部获得Ti-Si-N薄膜。用扫描电子显微镜(SEM)，X射线能量色散谱仪(EDX)，X射线衍射仪(XRD)，球痕法(ball-Crater)，显微硬度计(Hv)和涂层压入仪(Pε)分析不同肓孔深度处薄膜的微观结构和力学性能。结果表明，随着盲孔深度的增加，Ti-Si-N薄膜中Ti与Si元素相对比例降低，薄膜厚度下降，薄膜与基体的结合强度有很大提高，膜基复合显微硬度下降，而薄膜的本征硬度在盲孔深度为20mm处出现最大值。
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| 关 键 词： | 咏冲直流PCVD Ti—Si—N 复杂型腔 |
| 文章编号： | 1002-185(2005)05-0738-04 |
| 修稿时间： | 2003-10-13 |
Deposition of Ti-Si-N Thin Films at the Bottom of Deep Hole by Pulsed-D.C. PCVD |
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| Ma Qingsong,Ma Shengli,Xu Kewei. Deposition of Ti-Si-N Thin Films at the Bottom of Deep Hole by Pulsed-D.C. PCVD[J]. Rare Metal Materials and Engineering, 2005, 34(5): 738-741 |
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| Authors: | Ma Qingsong Ma Shengli Xu Kewei |
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| Abstract: | Ti-Si-N thin films prepared by pulsed-d.c. PCVD on the surface of HSS substrates, which were bolted with one end of deep holes to simulate the condition of complex-shaped inter-surface of various moulds and dies, were investigated. The micrographs show that the surface morphologies of the films become smoother with the increase of the depths of the holes. The thickness and hardness of the films decrease with the increase of the depth of the hole, which may result from the change of the composition of the films, while the adhesion between the films and substrates show an increase. |
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| Keywords: | pulsed-d.c. PCVD Ti-Si-N complex-shaped surface mould |
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