Early voltage in double heterojunction bipolar transistors

The Early voltage for abrupt double heterojunction bipolar transistors (DHBTs) has been calculated by using an effective junction velocity (S_c) at the base-collector heterojunction. S_c is obtained by self-consistently partitioning thermionic and quantum mechanical tunneling currents. Unlike single heterojunction bipolar transistors (SHBTs), the Early voltage varies very rapidly at low reverse bias and approaches the SHBT-limit at sufficiently high reverse bias. This is attributed to the presence of an energy barrier at the b-c heterojunction