| 一种深亚微米MOSFET高频噪声模型 |
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| 引用本文： | 吕志强,来逢昌,叶以正. 一种深亚微米MOSFET高频噪声模型[J]. 半导体技术, 2007, 32(8): 669-672,713 |
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| 作者姓名： | 吕志强 来逢昌 叶以正 |
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| 作者单位： | 哈尔滨工业大学,微电子中心,哈尔滨,150001 |
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| 摘 要： | 基于深亚微米MOSFET的短沟道效应(迁移率退化、热载流子效应、体电荷效应、沟道长度调制效应等),提出了一种高频沟道噪声分析模型.该分析模型不仅具有较高的精确性,而且只包括MOSFET的工艺参数和电学参数,不含有微积分和拟合参数,较大地提高了MOSFET高频噪声模型的易用性.根据MOSFET的高频等效电路,得出了MOSFET的噪声系数模型.实验结果证明,提出的深亚微米MOSFET高频噪声模型的仿真结果与测试结果的平均误差不到0.4 dB,并与其他高频沟道噪声分析模型进行了比较.
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| 关 键 词： | MOSFET 沟道热噪声 功率谱密度 噪声系数 |
| 文章编号： | 1003-353X（2007）08-0669-04 |
| 修稿时间： | 2007-03-21 |
High-Frequency Noise Modeling in Deep Submicron MOSFET |
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| L Zhi-qiang,LAI Feng-chang,YE Yi-zheng. High-Frequency Noise Modeling in Deep Submicron MOSFET[J]. Semiconductor Technology, 2007, 32(8): 669-672,713 |
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| Authors: | L Zhi-qiang LAI Feng-chang YE Yi-zheng |
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| Affiliation: | Microelectronic Center, Harbin Institute of Technology, Harbin 150001, China |
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| Abstract: | An analytical modeling of MOSFET channel noise was proposed by considering short-channel effects of deep submicron MOSFET,such as mobility degradation,hot carrier,bulk charge and channel length modulation effect.The model is accurate and suitalble because it only depends on process and electrical parameters of MOSFET and doesn't include difierential,integral or approximate factors.Based on HF equivalent circuit of MOSFET,noise parameters were achieved.Good agreement(average error was less than 0.4 dB)between calculated and measured results were demonstrated,and the proposed noise model was compared with other HF noise modelings of submicron MOSFET. |
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| Keywords: | MOSFET channel noise power spectral density noise figure |
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