Production of submicron SiC particles by d.c. thermal plasma: a systematic approach based on injection parameters |
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Authors: | F. Allaire L. Parent S. Dallaire |
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Affiliation: | (1) Industrial Materials Research Institute, National Research Council of Canada, 75, De Mortagne, J4B 6Y4 Boucherville, Québec, Canada |
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Abstract: | Aiming at producing high temperature structural ceramics, ultra-fine SiC powders were synthesized by the gas phase reaction of silicon tetrachloride with methane in a d.c. thermal plasma. The influence of parameters as the SiCl4 feeding rate, C/Si and H2/C molar ratios and internal pressure on the powder properties were investigated. The SiC powders were characterized by chemical analysis, Fourier transform infrared spectroscopy, X-ray diffraction and scanning electronic microscopy. The experimental set-up allows the production of β-SiC powders at a rate of 200 g h−1 with particle size around 0.1 μm. The main impurities in the as-produced powder handled at ambient atmosphere are: oxygen (1.8–2.5%) and free carbon (3–4%). Interesting relationships were found between the SiCl4 feeding rate and the H2/C molar ratio and between the C/Si molar ratio and the internal pressure. The internal pressure plays a major role in controlling the particle size. |
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