Active solar energy material science thermoelectric properties of nGe-p(InSb)1 ? x(Sn2)x heterostructures

By the method of liquid phase epitaxy, the epitaxial layers of a substitutional solid solution of the (InSb)_{1 − x} (Sn²) _x (1 ≤ x ≤ 0.05) p type of conductivity on nGe substrates were grown from a limited volume of an indium solution melt. It has been found that during the heating of the structure in the dark, an electrical current and voltage are generated in it.