首页 | 本学科首页   官方微博 | 高级检索  
     

(TiW)C-Ni硬质合金粉体合成的研究
引用本文:尹超,赵秀娟,陈春焕,李国军,任瑞铭.(TiW)C-Ni硬质合金粉体合成的研究[J].硬质合金,2009,26(2):92-97.
作者姓名:尹超  赵秀娟  陈春焕  李国军  任瑞铭
作者单位:大连交通大学材料科学与工程学院,辽宁,大连,116028
摘    要:以普通微米级的TiO2、W、Ni和活性碳为原料,采用机械激活合成法制备了(TiW)C-Ni硬质合金粉体。用XRD对粉体进行物相分析,用SEM分析激活及合成粉末的颗粒形貌,用气体容量法测定碳含量,用脉冲色谱法测试氧含量。结果表明:普通微米级的原料经过6h机械激活后,在1200℃下真空合成就能得到(TiW)C-Ni硬质合金粉体,但游离碳含量较高,最佳合成温度为1250℃;Ni在激活时加入不影响(TiW)C的合成;在同一温度下,游离碳含量随活性碳的增加而增加,化合碳含量随活性碳的增加先增加后减少。

关 键 词:(TiW)C-Ni硬质合金  粉末  机械激活合成法  碳含量  氧含量

Research on Synthesis of (TiW)C-Ni Cemented Carbide Powder
Yin Chao,Zhao Xiujuan,Chen Chunhuan,Li Guojun,Ren Ruiming.Research on Synthesis of (TiW)C-Ni Cemented Carbide Powder[J].Cemented Carbide,2009,26(2):92-97.
Authors:Yin Chao  Zhao Xiujuan  Chen Chunhuan  Li Guojun  Ren Ruiming
Affiliation:Yin Chao Zhao Xiujuan Chen Chunhuan Li Guojun Ren Ruiming (College of Materials Science and Engineering, Dalian Jiaotong University, Dalian Liaoning 116028)
Abstract:The (TiW)C-Ni cemented carbide powder was fabricated by means of mechanically activated synthesis (MAS), using micrometer TiO2, W, Ni and activated carbon. The phase of powder was analyzed by XRD, the topography of activated and synthesized powder was analyzed by SEM, the oxygen content was tested by pulse chromatography method and the carbon content was tested by gas-volumetric method. The results showed that the (TiW)C-Ni powder of high free carbon content can be synthesized at 1200℃ in vacuum using ordinary micron powder as raw materials which have been activated for 6 hours, the optimal synthesis temperature is 1250℃. Ni added in the milling does not affect the synthesis of (TiW)C. At the same synthesis temperature, the free carbon content increases with inereasing amount of activated carbon, but the content of combined carbon firstly increases and then decreases with increasing amount of activated carbon.
Keywords:(TiW)C-Ni cemented carbide  powder  mechanieally activated synthesis  carbon content  oxygen content
本文献已被 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号