| 2英寸GaAs快速热退火技术研究 |
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| 引用本文： | 张绛红,宋马成,郝景辰,廉亚光.2英寸GaAs快速热退火技术研究[J].微纳电子技术,1996(1). |
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| 作者姓名： | 张绛红 宋马成 郝景辰 廉亚光 |
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| 作者单位： | 石家庄电子部第１３研究所 |
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| 摘 要： | 为配合２０００门ＧａＡｓ超高速门阵列及ＧａＡｓ超高速分频器等２英寸ＧａＡｓ工艺技术研究，开展了２英寸ＧａＡｓ快速热退火技术研究。做出了阈值电压为０～０．２Ｖ，跨导大于１００ｍＳ／ｍｍ的Ｅ型ＧａＡｓＭＥＳＦＥＴ和夹断电压为－０．４～－０．６Ｖ，跨导大于１００ｍＳ／ｍｍ的低阈值Ｄ型ＧａＡｓＭＥＳＦＥＴ。
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| 关 键 词： | 砷化镓，快速热退火，离子注入，超高速门阵列 |
Technical Research on 2in GaAs Rapid Thermal Annealing |
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| Zhang Jianghong,Song Macheng,Hao Jingchen,Lian Yaguang.Technical Research on 2in GaAs Rapid Thermal Annealing[J].Micronanoelectronic Technology,1996(1). |
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| Authors: | Zhang Jianghong Song Macheng Hao Jingchen Lian Yaguang |
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| Abstract: | The characteristics of 2in GaAs rapid thermal annealing is studied for the fabrication of GaAs 2000 gates array and GaAs very-high speed frequency divider.E-type GaAs MESFET with threshold voltage ranging from 0 to 0.2V,transconductance greater than 100mS/mm,and low-threshold D-type GaAs MES FET with pinch-off voltage ranging from-0.4 to-0.6V and transconductance greater than 100mS/mm have been fabricated. |
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| Keywords: | GaAs RTA Ion implantation Very-high speed gate array |
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