| 新型URE-2000S型紫外单、双面深度光刻机研制 |
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| 引用本文： | 马平,杨春利,胡松,赵立新.新型URE-2000S型紫外单、双面深度光刻机研制[J].微纳电子技术,2005,42(8):388-391. |
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| 作者姓名： | 马平 杨春利 胡松 赵立新 |
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| 作者单位： | 中国科学院光电技术研究所,成都,610209 |
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| 摘 要： | 重点介绍新近开发的用于单、双面深度曝光的URE-2000S新型紫外光刻设备的技术背景、工作原理、结构组成、技术措施以及总体性能。该设备采用了国内首创的CCD图像底面对准技术、单曝光头实现双面对准曝光,具有双面套刻对准精度高、操作简单、工作高效等优点。实验表明,该设备总体性能处于国产双面光刻的先进水平,接近国外同类产品水平。
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| 关 键 词： | 双面光刻 底面对准 深度曝光 掩模 样片 |
| 文章编号： | 1671-4776(2005)08-0388-04 |
| 修稿时间： | 2004年12月27 |
Studies on URE-2000S a New Single & Double-Side UV Depth-Lithography System |
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| MA Ping,YANG Chun-li,HU Song,ZHAO Li-xin.Studies on URE-2000S a New Single & Double-Side UV Depth-Lithography System[J].Micronanoelectronic Technology,2005,42(8):388-391. |
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| Authors: | MA Ping YANG Chun-li HU Song ZHAO Li-xin |
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| Abstract: | The technology infrastructure,operating principle,configuration,technology solutions and all performances of URE-2000S-a new UV depth-lithography system successfully developed lately used in single & double-side exposure are stressed. This system used CCD images bottom-side alignment technology of double-side exposure carried out by one exposure head. The results show that the performances of the tool are leading-edge at home and nearly reached the same level as that abroad. |
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| Keywords: | double-side lithography bottom side alignment deep-lithograph mask wafer |
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