Anisotropic Magnetoresistance of GaMnAs Ferromagnetic Semiconductors |
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| Authors: | P Vašek P Svoboda V Novák M Cukr Z Výborný V Jurka J Stuchlík M Orlita D K Maude |
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| Affiliation: | 1.Institute of Physics ASCR,Prague,Czech Republic;2.Grenoble High Magnet Field Lab,CNRS,Grenoble,France |
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| Abstract: | The angular dependence of the magnetoresistance has been studied for two sets of samples: annealed and hydrogenated, respectively.
Different behavior of magnetoresistance anisotropy has been discussed in terms of change of scattering rate and/or introduction
of strain during treatment. |
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