The Magnetic and Structural Properties of SiC-Doped MgB2 Bulks Prepared by the Standard Ceramic Processing

According to general formula MgB_2?x SiC _x (x=0,0.05,0.1,0.2), MgB₂ and SiC-doped bulk superconductors were prepared by the standard ceramic processing. The mixtures of the corresponding powders were sintered at 750?°C for 0.5 h under pressure of 8 bar Argon. X-ray diffraction patterns show that all the samples have MgB₂ as the main phase with a very small amount of MgO; further, with SiC-doped, the presence of Mg₂Si is also noted. The magnetization-temperature measurements showed a transition temperature of 37.5 K for the undoped sample which indicates the typical transition temperature of MgB₂. When the content of SiC increased in the sample, the transition temperatures decreased to the lower temperatures systematically. The M?CH loops measured using a VSM showed very large magnetization value at low temperature for SiC doped samples. The largest M?CH loops were taken from the sample contains 5% SiC. The critical current density of samples calculated from M?CH loops indicated a value of around 4×10⁵ A/cm², which is in good agreement with the literature.