等离子体源离子注入法制备类金刚石薄膜

用等离子体源注入(PSII)在Si(100)上制备类金刚石膜，放电气体采用CH4，用微波电子回旋共振(ECR)产生等离子体。将-20～-30kV的高压加在衬底上，来提高离子的能量。通过Raman光谱和FT-IR光谱检测了类金刚石膜的化学组成及状态，并对其机械性能和表面形貌进行了检测。结果显示，硅片硬度和摩擦因数得到了改善，用PSII能够制备出性能优良的膜，可以将其应用到微电子器件(MEMS)上去。

Preparation of Diamond-like Carbon Films by Plasma Source Ion Implantation

Diamond-like carbon (DLC) films were prepared on silicon (100) wafer by plasma source ion implan-tation (PSII). Methane (CH4) was used as working gas for microwave electron cyclotron resonance (ECR) plasma. High negative voltage pulses of - 20 - - 30 kV was applied to the substrate for enhancing the ion energy. The chemical composition and chemical structure of DLC films were measured by Raman spectroscopy and FT-IR spectroscopy. Meanwhile the mechanical properties and surface morphology information of DLC were obtained. The results showed that the hardness and friction coefficient of silicon wafer were improved. DLC films fabricated by PSII had good mechanical properties, so the DLC films could be applied to MEMS.