| 具有碳纳米管掺杂的场增强型DBD平面光源性能研究 |
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| 引用本文： | 刘震,韦海成. 具有碳纳米管掺杂的场增强型DBD平面光源性能研究[J]. 真空电子技术, 2012, 0(2): 40-43,54 |
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| 作者姓名： | 刘震 韦海成 |
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| 作者单位： | 西安交通大学电子物理与器件教育部重点实验室,陕西 西安,710049 |
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| 摘 要： | 为了降低介质阻挡放电平面光源(DBDL)器件的着火电压以及提高其发光效率,本文提出了一种掺杂型的具有场增强型结构的DBD平面光源,该结构采用碳纳米管(CNT)与荧光粉相混合,在荧光粉表明镀有一层厚度为40 nm的MgO薄膜以提高二次电子发射系数及降低气体放电中产生的离子对CNT的冲击.实验结果表明采用在荧光粉中掺杂CNT以及蒸镀MgO薄膜的DBD平面光源结构可以有效降低器件的着火电压和提高发光效率,同传统无掺杂的结构相比,在气压为50kPa的Ne-15％Xe混合气体时,掺杂比为1 ∶ 5000的DBD平面光源其着火电压降低了10％；在相同输入功率下,其亮度及发光效率提高了约20％.
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| 关 键 词： | 介质阻挡放电 平面光源 碳纳米管 氧化镁 |
Investigation of the Characteristics of CNT-Doped Field Enhanced Type DBD Flat Lamp |
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| LIU Zhen , WEI Hai-cheng. Investigation of the Characteristics of CNT-Doped Field Enhanced Type DBD Flat Lamp[J]. Vacuum Electronics, 2012, 0(2): 40-43,54 |
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| Authors: | LIU Zhen WEI Hai-cheng |
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| Affiliation: | (Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University,Xi’an 710049,China) |
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| Abstract: | A novel CNT-doped field enhanced type mercury-free dielectric barrier discharge(DBD) flat lamp(DBDL) was proposed to lower the ignition voltage and improve the luminous efficacy of the DBD lamp.The carbon nanotube(CNT) was adopted and mixed with the phosphors,on which a layer of MgO was deposited to enlarge the secondary electron coefficient and protect the CNT from being destroyed by the ion generated by the plasma discharge.The prototype was built and verified.The experiment results show that the ignition voltage decreased 10% compared with traditional DBD lamp without CNT and MgO film under the conditions of Ne-15%Xe at a pressure of 50 kPa.The luminance and luminous efficacy increased by 20% under the same input power when the ratio of CNT to phosphors is 1∶5000. |
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| Keywords: | Dielectric barrier discharge Flat fluorescent lamp Carbon nanotube MgO |
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