Stress intensities at interface corners in anisotropic bimaterials

Asymptotic stress and displacement fields near the tip of a sharp anisotropic bimaterial interface corner are computed using a combination of the Stroh formalism and the Williams eigenfunction expansion method. From the asymptotic fields, the path independent H-integral is developed and implemented to calculate anisotropic interface corner stress intensities. The calculation procedure is demonstrated for two glass–silicon interface corner configurations that commonly arise in practice in the microsensor industry. In each case, the bimaterial interface corner experiences mixed mode I and II loading, and accurate estimates of both stress intensities are obtained.