Fast PEALD ZnO Thin-Film Transistor Circuits |
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| Authors: | Mourey D A Zhao D A Sun J Jackson T N |
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| Affiliation: | Center for Thin Film Devices and Materials Research Institute, Department of Materials Science and Engineering, Penn State University, University Park, USA; |
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| Abstract: | We report stable high-mobility ZnO thin-film transistors (TFTs) and fast circuits fabricated using a novel weak reactant plasma-enhanced atomic layer deposition (PEALD) process. This PEALD process is a highly scalable manufacturable process and is a faster and simpler alternative to conventional atomic layer deposition. Using PEALD, we have deposited highly crystalline (002) textured ZnO thin films at a low temperature (200 $^{circ}hbox{C}$). Using PEALD ZnO films, we have fabricated high-mobility TFTs (20–30 $hbox{cm}^{2}/hbox{V} cdot hbox{s}$ ), which have $≪$100-mV threshold voltage shifts after bias stress at 80 $^{circ}hbox{C}$ for 20 000 s. Using these high-performance TFTs, we have also fabricated simple 15-stage ring oscillator circuits with a propagation delay of 22 ns/stage for a supply voltage of 16 V, which, to the best of our knowledge, are the fastest ZnO TFT circuits reported to date. |
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