| GaInP/AlGaInP脊形波导激光器器件结构的优化研究 |
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| 引用本文： | 高峰,章燕申. GaInP/AlGaInP脊形波导激光器器件结构的优化研究[J]. 半导体光电, 2001, 22(2): 90-92 |
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| 作者姓名： | 高峰 章燕申 |
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| 作者单位： | 清华大学 精密仪器系, |
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| 摘 要： | 通过优化脊形波导的结构参数可以降低脊形波导激光器的阈值电流，提出了实现亚微米脊宽，从而降低阈值电流的方法。针对脊形波导制作过程中蚀刻深度不易控制的问题，对GaInP/AlGaInP材料中加入蚀刻阻挡层进行了研究。
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| 关 键 词： | GaInP／AlGaInP 脊形波导 优化 激光器器件 结构 |
| 文章编号： | 1001-5868(2001)02-0090-03 |
| 修稿时间： | 2000-10-16 |
Structure Optimization of GaInP/AlGaInP Ridge Waveguide Laser Diode |
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| GAO Feng,ZHANG Yan-shen. Structure Optimization of GaInP/AlGaInP Ridge Waveguide Laser Diode[J]. Semiconductor Optoelectronics, 2001, 22(2): 90-92 |
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| Authors: | GAO Feng ZHANG Yan-shen |
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| Abstract: | It is found that optimization of the structure parameters of ridge waveguide (RWG) can decrease the threshold current of RWG laser diode. The way to get the device with sub micron ridge width is proposed. In order to improve the controllability of the dry etching depth during the fabrication process of ridge waveguide, an etch stop layer is designed in the vertical structure of GaInP/AlGaInP ridge waveguide. |
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| Keywords: | GaInP/AlGaInP LD ridge waveguide sub micron ridge width etch stop layer |
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