| 硅片清洗研究进展 |
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| 引用本文： | 储佳,马向阳,杨德仁,阙端麟. 硅片清洗研究进展[J]. 半导体技术, 2001, 26(3): 17-19,34 |
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| 作者姓名： | 储佳 马向阳 杨德仁 阙端麟 |
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| 作者单位： | 浙江大学硅材料国家重点实验室，浙江杭州 310027 |
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| 基金项目： | 国家自然科学基金;69976025; |
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| 摘 要： | 综述了清洗液的组成、特点、清洗机理、对硅片表面质量的影响以及清洗技术和理论的发展；着重指出了，改进的RCAI对颗粒度、微粗糙度和金属沾污作用的机理，讨论了它与清洗顺序的关系，极度稀释的RCA2能使金属沾污降至10∧10原子/cm∧2以下，且不易使颗粒重新沉淀；最后介绍了清洗工艺的最新进展。
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| 关 键 词： | 抛光硅片 超大规格集成电路 清洗 |
| 文章编号： | 1003-353X(2001)03-0017-03 |
Silicon wafer cleaning |
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| CHU Jia,MA Xiang-yang,YANG De-ren,QUE Duan-lin. Silicon wafer cleaning[J]. Semiconductor Technology, 2001, 26(3): 17-19,34 |
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| Authors: | CHU Jia MA Xiang-yang YANG De-ren QUE Duan-lin |
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| Abstract: | This paper is a review on the evolution of cleaning technologies and theories, focusing on the recipes of cleaning solutions, their characteristics, mechanism and their impacts on the surface quality of polished wafers. The effects of improved RCA1 are presented in particular, RMS and metal contamination, and the correlation with the cleaning sequence. Extremely diluted RCA2 can reduce metal contamination down to 1010at/cm2, and is unlikely to introduce particle re-deposition. At last, the up-to-date technologies of wafer cleaning are discussed. |
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| Keywords: | polished silicon wafer ULSI cleaning |
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