| 紫外写入技术制备光波导器件研究 |
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| 引用本文： | 吴远大,夏君磊,安俊明,李建光,王红杰,胡雄伟.紫外写入技术制备光波导器件研究[J].半导体学报,2006,27(4):744-746. |
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| 作者姓名： | 吴远大 夏君磊 安俊明 李建光 王红杰 胡雄伟 |
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| 作者单位： | 中国科学院半导体研究所光电研发中心，北京 100083;中国科学院半导体研究所光电研发中心，北京 100083;中国科学院半导体研究所光电研发中心，北京 100083;中国科学院半导体研究所光电研发中心，北京 100083;中国科学院半导体研究所光电研发中心，北京 100083;中国科学院半导体研究所光电研发中心，北京 100083 |
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| 摘 要： | 研究了采用PECVD方法生长的Si基SiO2波导材料的光敏特性.经过高压载氢处理,利用KrF准分子激光脉冲(工作波长为248nm)在波导材料中诱导出的折射率变化量达到0.005,相对值约增加0.34%.详细研究了紫外光诱导出的折射率变化沿样品深度方向的分布情况.最后,采用紫外写入法在PECVD方法生长的Si基SiO2波导芯层中制备出了单模波导和Y分束器样品,并观测到了通光现象,实测结果与模拟结果一致.
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| 关 键 词： | 紫外写入 折射率 光波导 分束器 写入技术 光波导器件 研究 Technology Devices Optical Waveguide 模拟结果 实测结果 光现象 观测 分束器 单模波导 芯层 紫外写入法 分布情况 方向 深度 样品 紫外光诱导 相对值 |
| 文章编号： | 0253-4177(2006)04-0744-03 |
| 收稿时间： | 06 17 2005 12:00AM |
| 修稿时间： | 12 5 2005 12:00AM |
Fabrication of Optical Waveguide Devices with UV-Writing Technology |
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| Wu Yuand,Xia Junlei,An Junming,Li Jianguang,Wang Hongjie and Hu Xiongwei.Fabrication of Optical Waveguide Devices with UV-Writing Technology[J].Chinese Journal of Semiconductors,2006,27(4):744-746. |
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| Authors: | Wu Yuand Xia Junlei An Junming Li Jianguang Wang Hongjie and Hu Xiongwei |
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| Affiliation: | Research and Development Center for Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Research and Development Center for Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Research and Development Center for Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Research and Development Center for Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Research and Development Center for Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Research and Development Center for Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | The photosensitivity of commercial Si/SiO2 waveguide materials prepared by PECVD is studied.After exposure to high-pressure hydrogen,the as-deposited films are irradiated with excimer-laser pulses operating at 248nm.The change in the induced relative refractive index is about 0.34%.The sectional index distribution of UV-writing waveguides is investigated in detail.Finally,single-mode optical waveguides and Y-splitters are fabricated from silica-based planar optical waveguides with UV-writing technology with a silicon mask.The test results agree with the simulation results. |
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| Keywords: | UV-writing refractive index optical waveguide optical splitter |
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