| 金属Cr阻挡层对柔性不锈钢衬底Cu(In,Ga)Se2太阳电池性能的影响 |
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| 引用本文： | 张力,何青,徐传明,薛玉明,王春婧,施成营,肖建平,李长健,孙云. 金属Cr阻挡层对柔性不锈钢衬底Cu(In,Ga)Se2太阳电池性能的影响[J]. 半导体学报, 2006, 27(10): 1781-1784 |
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| 作者姓名： | 张力 何青 徐传明 薛玉明 王春婧 施成营 肖建平 李长健 孙云 |
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| 作者单位： | 南开大学薄膜器件与技术研究所,天津市光电子薄膜器件与技术重点实验室,光电信息技术科学教育部重点实验室,天津,300071;南开大学薄膜器件与技术研究所,天津市光电子薄膜器件与技术重点实验室,光电信息技术科学教育部重点实验室,天津,300071;南开大学薄膜器件与技术研究所,天津市光电子薄膜器件与技术重点实验室,光电信息技术科学教育部重点实验室,天津,300071;南开大学薄膜器件与技术研究所,天津市光电子薄膜器件与技术重点实验室,光电信息技术科学教育部重点实验室,天津,300071;南开大学薄膜器件与技术研究所,天津市光电子薄膜器件与技术重点实验室,光电信息技术科学教育部重点实验室,天津,300071;南开大学薄膜器件与技术研究所,天津市光电子薄膜器件与技术重点实验室,光电信息技术科学教育部重点实验室,天津,300071;南开大学薄膜器件与技术研究所,天津市光电子薄膜器件与技术重点实验室,光电信息技术科学教育部重点实验室,天津,300071;南开大学薄膜器件与技术研究所,天津市光电子薄膜器件与技术重点实验室,光电信息技术科学教育部重点实验室,天津,300071;南开大学薄膜器件与技术研究所,天津市光电子薄膜器件与技术重点实验室,光电信息技术科学教育部重点实验室,天津,300071 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 研究了Cr扩散阻挡层对柔性不锈钢衬底Cu(InxGa1-x)Se2(CIGS)太阳电池性能的影响.XRD和SEM分析表明,Cr阻挡层能够部分阻挡Fe等杂质从不锈钢衬底热扩散进入CIGS吸收层中,同时可以显著降低CIGS吸收层的粗糙度,提高薄膜结晶质量.从衬底扩散进入吸收层中的Fe元素以FeInSe2的形式存在,并形成FeCu等深能级缺陷,钝化了器件的性能.相同工艺条件下,在玻璃、不锈钢以及不锈钢/Cr阻挡层上所制备电池的(有效面积0.87cm2)转换效率分别为10.7%,7.95%和8.58%,不锈钢衬底电池效率的提高归因于Cr阻挡层的作用.
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| 关 键 词： | 三步共蒸发工艺 Cu(InxGa1-x)Se2 柔性不锈钢衬底 Cr阻挡层 FeInSe2 |
| 文章编号： | 0253-4177(2006)10-1781-04 |
| 收稿时间： | 2006-03-14 |
| 修稿时间： | 2006-04-15 |
Solar Cells Deposited on Stainless Steel Substrate |
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| Zhang Li,He Qing,Xu Chuanming,Xue Yuming,Wang Chunjing,Shi Chengying,Xiao Jianping,Li Changjian,and Sun Yun. Solar Cells Deposited on Stainless Steel Substrate[J]. Chinese Journal of Semiconductors, 2006, 27(10): 1781-1784 |
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| Authors: | Zhang Li He Qing Xu Chuanming Xue Yuming Wang Chunjing Shi Chengying Xiao Jianping Li Changjian and Sun Yun |
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| Affiliation: | Key Laboratory of Opto-Electronic Information Science and Technology for the Ministry of Education,Key Laboratoryof Photo-Electronics Thin Film Devices and Techniques of Tianjin,Institute of Photo-ElectronicThin Film Device and Technology,Nankai Universit;Key Laboratory of Opto-Electronic Information Science and Technology for the Ministry of Education,Key Laboratoryof Photo-Electronics Thin Film Devices and Techniques of Tianjin,Institute of Photo-ElectronicThin Film Device and Technology,Nankai Universit;Key Laboratory of Opto-Electronic Information Science and Technology for the Ministry of Education,Key Laboratoryof Photo-Electronics Thin Film Devices and Techniques of Tianjin,Institute of Photo-ElectronicThin Film Device and Technology,Nankai Universit;Key Laboratory of Opto-Electronic Information Science and Technology for the Ministry of Education,Key Laboratoryof Photo-Electronics Thin Film Devices and Techniques of Tianjin,Institute of Photo-ElectronicThin Film Device and Technology,Nankai Universit;Key Laboratory of Opto-Electronic Information Science and Technology for the Ministry of Education,Key Laboratoryof Photo-Electronics Thin Film Devices and Techniques of Tianjin,Institute of Photo-ElectronicThin Film Device and Technology,Nankai Universit;Key Laboratory of Opto-Electronic Information Science and Technology for the Ministry of Education,Key Laboratoryof Photo-Electronics Thin Film Devices and Techniques of Tianjin,Institute of Photo-ElectronicThin Film Device and Technology,Nankai Universit;Key Laboratory of Opto-Electronic Information Science and Technology for the Ministry of Education,Key Laboratoryof Photo-Electronics Thin Film Devices and Techniques of Tianjin,Institute of Photo-ElectronicThin Film Device and Technology,Nankai Universit;Key Laboratory of Opto-Electronic Information Science and Technology for the Ministry of Education,Key Laboratoryof Photo-Electronics Thin Film Devices and Techniques of Tianjin,Institute of Photo-ElectronicThin Film Device and Technology,Nankai Universit;Key Laboratory of Opto-Electronic Information Science and Technology for the Ministry of Education,Key Laboratoryof Photo-Electronics Thin Film Devices and Techniques of Tianjin,Institute of Photo-ElectronicThin Film Device and Technology,Nankai Universit |
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| Abstract: | The effects of a Cr diffusion barrier on the performance of flexible Cu(In_xGa__ 1-x )Se_2(CIGS) solar cells deposited on stainless steel (SS) substrate are investigated.The XRD and SEM results show that the Cr barrier layer can partly block the thermal diffusion of Fe impurities from SS substrate to a CIGS absorber layer and also remarkably reduce the surface roughness of the CIGS layers,and thus the crystalline quality of CIGS thin films is improved.Iron in the compound FeInSe_2 forms a deep level defect in the CIGS absorber layers and degrades the photovoltaic properties.Flexible solar cells (with an active area of 0.87cm~2) deposited on Soda-Lime glass/Mo,SS/Mo and SS/Cr barrier/Mo,using the same deposition conditions,have conversion efficiencies of 10.7%,7.95%,and 8.58%,respectively.The enhancements of solar cells based on SS are due to the impacts of Cr barriers. |
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| Keywords: | three-stage co-evaporation process Cu(InxGa1-x)Se2(CIGS) flexible stainless steel substrate Cr barriers FeInSe2 |
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