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A 350 mV, 2 MHz, 16-kb SRAM with programmable wordline boosting in the 65 nm CMOS technology |
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| Authors: | Nabavi Morteza Sachdev Manoj |
| Affiliation: | 1.University of Waterloo, Waterloo, ON, Canada ; |
| Abstract: | Analog Integrated Circuits and Signal Processing - The paper presents an SRAM macro capable of working down to 350 mV with programmable wordline boosting feature. Wordline boosting allows... |
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