Hydride Vapor Phase Epitaxy of GaN Thick Films by the Consecutive Deposition Process Using GaCl3 |
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Authors: | Soo Min Lee Young Hoon Kim Su Jin Chung |
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Affiliation: | School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea |
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Abstract: | GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl3 consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al2O3 were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature. |
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Keywords: | gallium/gallium compounds thick films deposition nitrides |
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