An investigation of molecular beam epitaxy “in-situ” grown Ag/GaAs schottky diodes |
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Authors: | Y H Wang M P Houng F H Chen P W Sze M Hong J P Mannaerts |
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Affiliation: | (1) Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, ROC;(2) AT&T Bell Laboratories, 07974 Murray Hill, NJ |
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Abstract: | Electrical properties of molecular beam epitaxy “in-situ” grown Ag on (001) GaAs Schottky diodes were investigated. X-ray
rocking curves show a (111) main peak for “in-situ” Ag grown at low temperature. During annealing, the main peak of Ag rotates
from (111) to (200) to closely match that of the underlying GaAs lattice. The barrier height, 0.991 eV (determined by C-V
measurement), decreases whereas doping concentration increases with increasing annealing temperature. Interdiffusion and the
formation of some compound phases were also observed during annealing. A simple model, in which Ga dissociates from GaAs resulting
in an increase in uncompensated ions at the metal-semiconductor interface, is proposed to explain the observation that carrier
concentrations increase after annealing. |
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Keywords: | Metal-semiconductor contacts epitaxy Ag |
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