The leaching of chalcopyrite with cupric chloride

A comparative study of electrochemical leaching and chemical leaching of chalcopyrite was performed mainly at 343 K to elucidate the leaching mechanism of chalcopyrite with CuCl₂. Also, the morphology of the leached chalcopyrite surface was studied by using a single chalcopyrite crystal. The leaching with CuCl₂ produced a porous elemental sulfur layer on the chalcopyrite surface, showing a similar morphology to that produced during leaching with FeCl₃. The leaching kinetics were found to be linear over an extended period, followed by an acceleration stage, as a result of an increase in the reaction surface area. The leaching rate of chalcopyrite was proportional to C(CuCl₂)^0.5, whereas it was inversely proportional to C(CuCl)^0.5. The mixed potential of chalcopyrite exhibited a 66 mV decade⁻¹ dependency upon C(CuCl₂), and—69 mV decade⁻¹ upon C(CuCl). Based on these observations together with other findings, an electrochemical mechanism involving the oxidation of chalcopyrite and CuCl ₋ ² and the reduction of CuCl⁺ was proposed. The Tafel plot between the mixed potential and the current density obtained by converting the rate of chemical leaching gave a straight line whose slope was in good agreement with that of the electrochemical leaching. These findings strongly support the electrochemical mechanism of chalcopyrite leaching with cupric chloride.