| 微波退火时间对HfO2薄膜结构和光电性能的影响 |
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| 引用本文： | 赵恒利,杨培志,李赛,周启航. 微波退火时间对HfO2薄膜结构和光电性能的影响[J]. 稀有金属材料与工程, 2022, 51(4): 1325-1331 |
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| 作者姓名： | 赵恒利 杨培志 李赛 周启航 |
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| 作者单位： | 云南师范大学可再生能源材料先进技术与制备教育部重点实验室,云南师范大学可再生能源材料先进技术与制备教育部重点实验室,云南师范大学可再生能源材料先进技术与制备教育部重点实验室,云南师范大学可再生能源材料先进技术与制备教育部重点实验室 |
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| 基金项目： | 国家自然科学基金资助项目(U1802257)；云南省高校科技创新团队支持计划资助项目 |
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| 摘 要： | 采用原子层沉积(ALD)方法在硅衬底上沉积了氧化铪(HfO2)薄膜,对其进行不同时间的微波退火(MWA)。采用X射线衍射(XRD)、拉曼光谱(Raman)、原子力显微镜(AFM)、紫外可见光谱(UV-Vis)、椭偏仪(SE)和阻抗分析仪对薄膜的物相结构、形貌和光电性能进行表征,研究了微波退火时间对薄膜结构、光学和电学性能的影响。结果表明：沉积态的HfO2薄膜具有非晶态性质；当微波退火时间从5 min增至20 min时,HfO2薄膜的折射率几乎不变,结晶性增强,表面粗糙度降低,但介电常数却减小。
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| 关 键 词： | HfO2薄膜 原子层沉积 微波退火时间 折射率 介电常数 |
| 收稿时间： | 2021-07-19 |
| 修稿时间： | 2021-11-19 |
Effects of microwave annealing times on the structure, optical and electrical properties of HfO2 thin films |
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| Zhao Hengli,Yang Peizhi,Li Sai and Zhou Qihang. Effects of microwave annealing times on the structure, optical and electrical properties of HfO2 thin films[J]. Rare Metal Materials and Engineering, 2022, 51(4): 1325-1331 |
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| Authors: | Zhao Hengli Yang Peizhi Li Sai Zhou Qihang |
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| Affiliation: | Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology,Ministry of Education,Yunnan Normal University,Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology,Ministry of Education,Yunnan Normal University,Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology,Ministry of Education,Yunnan Normal University,Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology,Ministry of Education,Yunnan Normal University |
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| Abstract: | Hafnium oxide (HfO2) thin films were deposited on a silicon substrate using atomic layer deposition (ALD), and microwave annealing (MWA) was performed for different time. X-ray diffraction (XRD), Raman spectroscopy (Raman), atomic force microscopy (AFM), ultraviolet-visible spectroscopy (UV-Vis), ellipsometer (SE) and impedance analyzer were used to characterize the film performances. The effects of different microwave annealing time on the structure, optical and electrical properties of the film were studied in detail. The results show that the as-deposited HfO2 film was amorphous, when the microwave annealing time is increased from 5min to 20min, the crystallinity of the HfO2 film increases and the surface roughness decreases; but the dielectric constant decreases. In addition, the refractive index of the HfO2 film hardly changes with the increasing of the microwave annealing time. |
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| Keywords: | HfO2 thin films atomic layer deposition microwave annealing time refractive index dielectric constant |
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