| SnO_2－SiO_2双层薄膜氢敏元件的特性研究 |
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| 引用本文： | 祁志美,张耀华,李民强,唐红霖.SnO_2－SiO_2双层薄膜氢敏元件的特性研究[J].郑州轻工业学院学报(自然科学版),1994(Z1). |
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| 作者姓名： | 祁志美 张耀华 李民强 唐红霖 |
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| 作者单位： | 中国科学院合肥智能机械研究所 |
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| 摘 要： | 采用溶液－凝胶浸渍涂布工艺在Ａｌ＿２Ｏ＿３陶瓷管上制备了掺杂ＳｎＯ＿２气敏薄膜；利用高温热解法在ＳｎＯ＿２薄膜表面覆盖ＳｉＯ＿２气体分离膜后制得双层薄膜气敏元件。分别测试并比较单层和双层薄膜元件的气敏特性，结果表明：单层薄膜元件对可燃性气体无选择性、响应和恢复时间短；而双层薄膜元件对氢气表现出极高的灵敏度和优越的选择性，其响应和恢复时间都比单层薄膜元件有所延长，结合实验结果，从理论上阐述了双层薄膜元件对氢气的敏感机理。
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| 关 键 词： | 薄膜 氧化物 氧化锡 气敏器件 |
STUDY OF GAS-SENSING PROPERTIES OF SnO_2-SiO_2 DOUBLE-LAYER THIN FILMS TO HYDROGEN |
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| Qi Zhimei,Zhang Yaohua,Li Minqiang,Tang Honglin.STUDY OF GAS-SENSING PROPERTIES OF SnO_2-SiO_2 DOUBLE-LAYER THIN FILMS TO HYDROGEN[J].Journal of Zhengzhou Institute of Light Industry(Natural Science),1994(Z1). |
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| Authors: | Qi Zhimei Zhang Yaohua Li Minqiang Tang Honglin |
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| Abstract: | Doped SnO_2 gas-sensing thin films are prepared on Al_2O_3 ceramic tubes by the sol-gel method.As a molecular sieve,SiO_2 thin films are deposited on the SnO_2 thin films bythe pyrolysis of silicomethane. The gas-sensing properties of SnO_2 single-layer andSnO_2-SiO_2 double-layer thin film elements are investigated and compared with each oth-er.The SnO_2 single-layer thin film elements are sensitive extensively to various reducinggases(poor selectivity)and their response and recovery times are shorter.However,theSnO_2-SiO_2 double-layer thin film elements have a very high sensitivity and an excellentselectivity to hydrogen gas and their response and recovery times are longer than that ofSnO_2 single-layer thin film elements. The gassensing mechanism of SnO_2-SiO_2 double-laver thin film elements to hydrogen gas is analysed theoretically by connecting with theexperimental results. |
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| Keywords: | thin filsm oxides tin oxide gas sensitive devices |
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