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| 采用正交法研究金刚石偏压形核 | |
| 引用本文： | 王传新,汪建华,满卫东,王升高,马志斌,康志成,吴素娟. 采用正交法研究金刚石偏压形核[J]. 材料开发与应用, 2003, 18(2): 6-8,30 |
| 作者姓名： | 王传新 汪建华 满卫东 王升高 马志斌 康志成 吴素娟 |
| 作者单位： | 1. 中国科学院等离子体物理研究所,合肥,230031;武汉化工学院材料科学与工程系,武汉,430073 2. 武汉化工学院材料科学与工程系,武汉,430073 3. 中国科学院等离子体物理研究所,合肥,230031 |
| 摘 要： | 在微波等离子体化学气相沉积装置中 ,采用正交试验法研究金刚石在镜面抛光的Si( 1 0 0 )面上的偏压形核过程中 ,形核时间、偏压电压、气压及甲烷浓度对形核密度的影响 ,研究结果表明 :形核密度随形核时间的增加而增加 ,适中的偏压电压和沉积气压有利于金刚石的形核 ,而甲烷浓度的影响很小。正交试验所得的最佳形核条件为偏压 -1 5 0V ;时间 1 2min ;气压 4kPa;CH4 比率 5 % ,在该条件下金刚石的形核密度达到 1 0 1 0 个 cm2 。 |
| 关 键 词： | 化学气相沉积 正交试验 金刚石 形核 |
| 文章编号： | 1003-1545(2003)02-0006-04 |
Study on Bias-enhanced Nucleation of Diamond Using Orthogonal Method |
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| Wang Chuanxin ,,Wang Jianhua ,Man Weidong ,,Wang Shenggao ,,Ma Zhibin ,Kang Zhicheng ,Wu Sujuan. Study on Bias-enhanced Nucleation of Diamond Using Orthogonal Method[J]. Development and Application of Materials, 2003, 18(2): 6-8,30 | |
| Authors: | Wang Chuanxin Wang Jianhua Man Weidong Wang Shenggao Ma Zhibin Kang Zhicheng Wu Sujuan |
| Affiliation: | Wang Chuanxin 1,2,Wang Jianhua 2,Man Weidong 1,2,Wang Shenggao 1,2,Ma Zhibin 2,Kang Zhicheng 1,Wu Sujuan 2 |
| Abstract: | The bias enhanced nucleation of diamond on mirrorpolish Si(100) has been studied by using orthogonal method in a microwave plasma chemical vapor deposition (MPCVD) reactor. The effects of process parameters such as bias voltage, methane content, bias time and gas pressure on diamond nucleation are investigated. The results show that the diamond nucleation density increases in direct ratio with the nucleation time. The moderate bias voltage and gas pressure are beneficial to diamond nucleation while the effect of the methane concentration on the nucleation is negligible. The optimum nucleation condition obtained from orthogonal test is bias voltage -250V, nucleation time 12min, gas pressure 4kPa and methane concentration 4% under which a very high nucleation density up to 10 10 /cm 2 has been achieved. |
| Keywords: | Chemical vapor deposition Orthogonal method Diamond Nucleation |
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