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掺杂氧化钨薄膜的电致变色特性
引用本文:李建军,陈国平,刘云峰,黄蕙芬. 掺杂氧化钨薄膜的电致变色特性[J]. 真空, 2001, 0(2): 33-35
作者姓名:李建军  陈国平  刘云峰  黄蕙芬
作者单位:东南大学薄膜研究所,
摘    要:掺杂氧化钼对氧化钨薄膜的电致变色特性有一定的影响,本文介绍了用电子束蒸发制备不同MoO3掺杂比例的氧化钨膜,对其着色态与漂白态的光学特性以及循环伏安特性进行了实验研究,通过对循环伏安曲线的分析,对杂氧化钨薄膜电致变色的机理进行了讨论。

关 键 词:电致变色 氧化钨薄膜 氧化钼掺杂 电致变色材料 循环伏安法 电子束蒸发
文章编号:1002-0322(2001)02-0033-03
修稿时间:2000-11-04

Electrochromic propertiesof doped Tungsten Oxide thin films
LI Jian-jun,CHEN Guo-ping,LIU Yun-feng,HUANG Hui-fen. Electrochromic propertiesof doped Tungsten Oxide thin films[J]. Vacuum(China), 2001, 0(2): 33-35
Authors:LI Jian-jun  CHEN Guo-ping  LIU Yun-feng  HUANG Hui-fen
Abstract:The electrochromic(EC) properties of Tungsten Oxide thin films have been improved after doping with molybdic oxide. the W Mo oxide films deposited by electron beam evaporation WO 3 doped with different percentages of MoO 3 respectively were presented. The optical properties of colored and bleached state, and the cyclic voltage current characteristic of the W Mo oxide films have been experimentally studied. By investigating the cyclic voltage current characteristic, the electrochromic mechanism of doped WO 3 films has been discussed.
Keywords:electrochromism  tungsten oxide thin film  MoO 3 doping  
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